Disorder and persistent photoconductivity in ZnxCd1-xSe semiconductor alloys.

Optical Properties of Ternary Alloyed ZnxCd1-xSe Semiconductor Nanocrystals

In this study, ternary alloyed ZnxCd1-xSe (x=0, 0.2, 0.5, 0.8 and 1) semiconductor nanocrystals with high quality are synthesized by a high temperature decomposition route. The effect of Zn content (x) of ZnxCd1-xSe semiconductor nanocrystals on their physical properties is investigated by controlling the Zn/Cd ratios. The optical properties and morphologies of the prepared nanocrystals are mea...

ORIENTATION OF DIMERIC LIQUID CRYSTALS THROUGH ZnXCd1-XSe NANOSTRUCTURED SURFACES

Single layers of ZnxCd1-xSe with three different compositions (x = 0.39, 0.59, 0.8) and thickness of 400 nm have been prepared by thermal vacuum evaporation, through alloying of ultra thin ZnSe and CdSe films. The microstructure and surface morphology of ZnxCd1-xSe has been investigated by Atomic Force Microscopy. Chiral and achiral bi-stable smectic C liquid crystal textures were obtained usin...

Band-tail states in a Zn0.3Cd0.7Se semiconductor alloy probed by persistent photoconductivity.

The distribution of the conduction-band tail states in a Zn03Cd07Se II-VI semiconductor alloy has been determined experimentally using persistent photoconductivity (PPC) transient measurements, and is confirmed to be exponential. Our results show that the transport properties in II-VI semiconductor alloys are strongly influenced by tail states caused by alloy disorder. A class of transport prop...

Metal-insulator transition in semiconductor alloys probed by persistent photoconductivity.

The metal-insulator transition (MIT) caused purely by alloy disorder in a Zno 3Cdo 7Se semiconductor alloy has been probed by using persistent photoconductivity. Key parameters that describe the MIT, including the critical electron concentration n, and the energy tail states distribution parameter Eo, have been determined experimentally. Our results, together with those obtained for impurity-do...

Persistent photoconductivity in IIVI and IIIV semiconductor alloys and a novel infrared detector